Increasing the amount of forward bias will have what effect on the resistance of a PN junction diode?

Increasing the amount of forward bias applied to a PN junction diode leads to a decrease in its resistance. In the forward bias condition, the external voltage reduces the potential barrier at the junction, allowing more charge carriers (electrons and holes) to recombine across the junction. This enhancement in charge carrier movement significantly reduces the resistance of the diode. As forward bias voltage increases, the flow of current through the diode also rises exponentially, reflecting this reduction in resistance.

In practical applications, this characteristic of diodes is utilized in switching and rectification processes. As current flows more freely with increased forward bias, diodes can effectively conduct electricity with minimal resistance, which is essential for various electronic circuits.