With proper bias applied to a transistor, what type of resistance does the emitter-base junction have?

When proper bias is applied to a transistor, specifically in the context of a bipolar junction transistor (BJT), the emitter-base junction becomes forward-biased. In this state, the junction exhibits low resistance. This characteristic is essential for allowing current to flow easily through the transistor, enabling its operation as an amplifier or a switch.

In a forward-biased condition, charge carriers (electrons and holes) are injected across the junction, which decreases the barrier potential and allows for increased current flow. This low resistance is critical to the transistor's function, as it helps in controlling the overall flow of current from the collector to the emitter when the transistor is in the active region.

Understanding this concept is fundamental in grasping how transistors work within electronic circuits, as it highlights the importance of biasing in determining the operational state of the device.